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| Ordering number : ENA1269 2SK4179 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4179 Features * * * * General-Purpose Switching Device Applications Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 75 20 80 320 1.75 70 150 --55 to +150 100 48 Unit V V A A W W C C mJ A Note : *1 VDD=30V, L=50H, IAV=48A *2 L50H, Single pulse Marking : K4179 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. www..com Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72308QA TI IM TC-00001515 No. A1269-1/5 2SK4179 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=75V, VGS=0V VGS= 16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=40A ID=40A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=80A VDS=30V, VGS=10V, ID=80A VDS=30V, VGS=10V, ID=80A IS=80A, VGS=0V Ratings min 75 1 10 2 21 35 10.5 5400 480 350 62 335 220 160 100 30 28 1.07 1.5 13.7 4 typ max Unit V A A V S m pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7507-002 10.2 5.1 3.6 4.5 1.3 2.7 18.0 (5.6) 1.2 6.3 14.0 15.1 0.8 0.4 123 2.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN ID=40A RL=0.75 VDD=30V Avalanche Resistance Test Circuit L 50 D PW=10s D.C.1% VOUT 2SK4179 www..com G 10V 0V 50 VDD 2SK4179 P.G 50 S No. A1269-2/5 2SK4179 160 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT13864 25 ID -- VDS Tc=25C 10 V 160 ID -- VGS Tc= --25 C 75 C 2 3 4 5 7V 140 120 100 80 60 40 20 0 0 1 Drain Current, ID -- A 6V 25 --25C C VGS=5V Drain Current, ID -- A Tc = 75 C 6 7 25 C 8 IT13865 150 IT13867 1.6 IT13869 30 IT13871 8V VDS=10V Drain-to-Source Voltage, VDS -- V 30 28 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m 26 24 22 20 18 16 14 12 10 8 6 4 2 0 4 5 6 7 8 Static Drain-to-Source On-State Resistance, RDS(on) -- m ID=40A Single pulse 20 VGS=10V ID=40A Single pulse 15 Tc=75C 25C --25C 10 5 9 10 IT13866 0 --50 --25 0 25 50 75 100 125 Gate-to-Source Voltage, VGS -- V 100 Case Temperature, Tc -- C 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 yfs -- ID IS -- VSD VGS=0V Single pulse Forward Transfer Admittance, yfs -- S 7 5 3 2 10 7 5 3 2 1.0 VDS=10V C 25 C -25 =C Tc 75 Source Current, IS -- A 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 7 5 5 7 100 IT13868 10000 7 5 0.2 Tc=7 5 0.4 C 25C --25C 0.6 0.8 1.0 1.2 1.4 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD=30V VGS=10V Switching Time, SW Time -- ns 3 2 Ciss, Coss, Crss -- pF td(off) 3 2 www..com 100 7 5 tf tr 1000 7 5 3 2 Coss td(on) Crss 3 0.1 100 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 IT13870 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V No. A1269-3/5 2SK4179 10 9 VGS -- Qg VDS=30V ID=80A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 IT13872 1000 7 5 3 2 ASO IDP=320A ID=80A PW10s Drain Current, ID -- A 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 1m 10 s 10 ms 0m s 10 0 10 s s Operation in this area is limited by RDS(on). DC op er ati on 0.1 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.0 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 80 70 60 50 40 30 20 10 0 5 7 100 IT13873 PD -- Tc Allowable Power Dissipation, PD -- W 1.75 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Tc -- C 120 IT13874 Case Temperature, Tc -- C IT13875 EAS -- Ta Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT12429 Ambient Temperature, Ta -- C www..com No. A1269-4/5 2SK4179 Note on usage : Since the 2SK4179 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed www..com for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1269-5/5 |
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